Print Email Facebook Twitter IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts Title IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts Author Yang, G. (TU Delft Photovoltaic Materials and Devices) Ingenito, A. (TU Delft Photovoltaic Materials and Devices) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Department Electrical Sustainable Energy Date 2016-12-01 Abstract Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of about 720 mV and 704 mV for n-type and p-type, respectively, before any hydrogenation step. It is found that high-quality passivation can be obtained when confining the dopants within the poly-Si layers and realizing a shallow diffusion of dopants into the c-Si bulk, meaning a sharp decrease in doping concentration in the c-Si at the poly-Si/c-Si interface. The doping profile at the poly-Si/c-Si interface can be influenced by poly-Si layer thickness, poly-Si ion-implantation parameters, and post-implantation annealing conditions. The detailed discussion on the passivation properties of the poly-Si passivating contacts and their preparation conditions are presented in this paper. In addition, IBC solar cells with/without front surface field (FSF) are fabricated, with the optimized poly-Si passivating contacts as back surface field, BSF (n-type poly-Si), and emitter (p-type poly-Si). The best cell shows an efficiency of 21.2% (VOC=692 mV, JSC=39.2 mA/cm2, FF=78.3%, and pFF=83.5%). Subject Ion-implantationPoly-siliconPassivating contactIBC c-Si solar cells To reference this document use: http://resolver.tudelft.nl/uuid:81bcedd1-f973-48dc-9bb4-7f5ff33a9aac DOI https://doi.org/10.1016/j.solmat.2016.05.041 ISSN 0927-0248 Source Solar Energy Materials & Solar Cells, 158, 84-90 Event SiliconPV 2016, 2016-03-07 → 2016-03-09, Chambery, France Part of collection Institutional Repository Document type journal article Rights © 2016 G. Yang, A. Ingenito, O. Isabella, M. Zeman Files PDF 1_s2.0_S0927024816301520_main.pdf 894.98 KB Close viewer /islandora/object/uuid:81bcedd1-f973-48dc-9bb4-7f5ff33a9aac/datastream/OBJ/view