Print Email Facebook Twitter Cryogenic amplifier for fast real-time detection of single-electron tunneling Title Cryogenic amplifier for fast real-time detection of single-electron tunneling Author Vink, I.T. Nooitgedagt, T. Schouten, R.N. Vandersypen, L.M.K. Wegscheider, W. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2007-09-20 Abstract The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1?K and the circuit has a bandwidth of 1?MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this setup to monitor single-electron tunneling to and from an adjacent quantum dot. The authors measure fluctuations in the dot occupation as short as 400?ns, 20 times faster than in previous work. Subject electron mobilityquantum dotstunnelling To reference this document use: http://resolver.tudelft.nl/uuid:93218b4d-bbbd-4ead-b2eb-939853bbe3f0 DOI https://doi.org/10.1063/1.2783265 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v91/i12/p123512/s1 Source Applied Physics Letters, 91 (12), 2007 Part of collection Institutional Repository Document type journal article Rights (c) 2007 The Author(s); American Institute of Physics Files PDF Vink_2007.pdf 373.59 KB Close viewer /islandora/object/uuid:93218b4d-bbbd-4ead-b2eb-939853bbe3f0/datastream/OBJ/view