Print Email Facebook Twitter Influence of thermal boundary conditions on the current-driven resistive transition in VO2 microbridges Title Influence of thermal boundary conditions on the current-driven resistive transition in VO2 microbridges Author Manca, N. Kanki, T. Tanaka, H. Marré, D. Pellegrino, L. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2015-12-31 Abstract We investigate the resistive switching behaviour of VO2 microbridges under current bias as a function of temperature and thermal coupling with the heat bath. Upon increasing the electrical current bias, the formation of the metallic phase can progress smoothly or through sharp jumps. The magnitude and threshold current values of these sharp resistance drops show random behaviour and are dramatically influenced by thermal dissipation conditions. Our results also evidence how the propagation of the metallic phase induced by electrical current in VO2, and thus the shape of the resulting high-conductivity path, are not predictable. We discuss the origin of the switching events through a simple electro-thermal model based on the domain structure of VO2 films that can be useful to improve the stability and controllability of future VO2-based devices. To reference this document use: http://resolver.tudelft.nl/uuid:93ad45e8-4af6-46c4-b03f-42585c659264 ISSN 0003-6951 Source Applied Physics Letters, 107 (art.nr. 143509), 2015 Part of collection Institutional Repository Document type journal article Rights (c) 2015 AIP Publishing LLC Files PDF 321352.pdf 1.58 MB Close viewer /islandora/object/uuid:93ad45e8-4af6-46c4-b03f-42585c659264/datastream/OBJ/view