Print Email Facebook Twitter AlGaN/GaN HEMT micro-sensor technology for gas sensing applications Title AlGaN/GaN HEMT micro-sensor technology for gas sensing applications Author Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology) Zhang, J. (Fudan University) Jiang, Yang (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Chen, Ganhui (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Yu, Hongyu (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Contributor Jiang, Yu-Long (editor) Tang, Ting-Ao (editor) Ye, Fan (editor) Date 2018 Abstract Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H 2 S and compare them to H 2 and NO 2 . Finally we demonstrate recent results of NO 2 detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices. Subject approximation theoryextrapolationFourier transformsimage enhancementimage fusionimage resolutioninverse transformsmatrix algebramicrowave imaging To reference this document use: http://resolver.tudelft.nl/uuid:a72381ea-5458-4d43-beb8-13fcb7658042 DOI https://doi.org/10.1109/ICSICT.2018.8564904 Publisher IEEE, Piscataway, NJ ISBN 978-1-5386-4441-6 Source ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings Event 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, 2018-10-31 → 2018-11-03, Qingdao, China Bibliographical note Accepted author manuscript Part of collection Institutional Repository Document type conference paper Rights © 2018 R. Sokolovskij, J. Zhang, Yang Jiang, Ganhui Chen, Kouchi Zhang, Hongyu Yu Files PDF 51774775_ICSICT_HEMT_sens ... uHY_v3.pdf 787.26 KB Close viewer /islandora/object/uuid:a72381ea-5458-4d43-beb8-13fcb7658042/datastream/OBJ/view