Title
Dead Time Control Circuit in Monolithic GaN Class D Audio Amplifier
Author
Pan, Jing (TU Delft Electrical Engineering, Mathematics and Computer Science)
Contributor
Fan, Q. (mentor)
French, P.J. (graduation committee)
Berkhout, Marco (graduation committee)
Degree granting institution
Delft University of Technology
Programme
Electrical Engineering
Date
2023-10-13
Abstract
GaN transistors have advantages over conventional Si MOSFETs, such as lower on-resistance, lower parasitic capacitance, higher break-down voltage, etc. However, due to the lack of the body diode, when GaN transistors conduct reverse current during dead time, the source-drain voltage (VSD) can be very large (up to 4-5 V, depending on the output current). High reverse conduction voltage leads to large power loss during dead time for the GaN class D amplifier. In this project, a dead time control circuit is proposed. With the dead time control circuit, the dead time can be reduced from a large default value to around 5 ns. The output power of the class D amplifier can be improved, and the third-order harmonic distortion can also be improved by 5-10 dB for different corners and temperatures.
Subject
Dead time control circuit
GaN class-D amplifier
monolithic GaN circuit
To reference this document use:
http://resolver.tudelft.nl/uuid:b71497fc-9d8e-4f8e-8af1-65a8d7781aa8
Embargo date
2025-10-13
Part of collection
Student theses
Document type
master thesis
Rights
© 2023 Jing Pan