A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Souri, K. (TU Delft Electronic Instrumentation)
Chae, Y. (TU Delft Electronic Instrumentation)
Makinwa, K.A.A. (TU Delft Electronic Instrumentation)

Fujino, L (editor)

2012

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.

Temperature sensors
Calibration
Energy efficiency
Capacitors
Temperature measurement
Energy resolution

http://resolver.tudelft.nl/uuid:d452e5d3-355e-4a4c-809e-522989db4640

https://doi.org/10.1109/ISSCC.2012.6176978

IEEE Society, Piscataway, NJ

978-1-4673-0377-4

Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference

ISSCC 2012, San Francisco, California, 2012-02-19 → 2012-02-23, Piscataway, NJ, USA

Accepted author manuscript

Institutional Repository

conference paper

© 2012 K. Souri, Y. Chae, K.A.A. Makinwa