Print Email Facebook Twitter Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics Title Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics Author Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences) Kang, Xuanwu (Chinese Academy of Sciences) Zheng, Yingkui (Chinese Academy of Sciences) Wei, Ke (Chinese Academy of Sciences) Li, Pengfei (Chinese Academy of Sciences) Wang, Wenbo (Shenzhen Institute of Wide-bandgap Semiconductors) Liu, Xinyu (Chinese Academy of Sciences) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Date 2020 Abstract The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V. Subject Dry etchGaNInductively coupled plasma (ICP)MesaQuasi-verticalSchottky barrier diode (SBD)Sidewall profile To reference this document use: http://resolver.tudelft.nl/uuid:e0a4f1dd-2798-442c-b5c1-e139b49321ac DOI https://doi.org/10.3390/nano10040657 ISSN 2079-4991 Source Nanomaterials, 10 (4), 1-13 Part of collection Institutional Repository Document type journal article Rights © 2020 Y. Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Kouchi Zhang Files PDF nanomaterials_10_00657_v2.pdf 5.87 MB Close viewer /islandora/object/uuid:e0a4f1dd-2798-442c-b5c1-e139b49321ac/datastream/OBJ/view