Print Email Facebook Twitter Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors Title Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors Author Mohammadi, V. (TU Delft Electronic Instrumentation) Nihtianova, S. (TU Delft Electronic Instrumentation) Contributor Neralla, Sudheer (editor) Date 2016 Abstract In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes with electronic interface circuits and other sensors on a single chip. In this way, smart‐sensor systems or even charge‐coupled device (CCD) or complementary metal oxide semiconductor (CMOS) ultraviolet (UV) imagers can be realised. Subject low‐temperature boron depositionultrashallow p+n junction photodiodechemical vapour depositionUV photodetectorCMOS imagerOA-Fund TU Delft To reference this document use: http://resolver.tudelft.nl/uuid:f4f66452-8a52-42c2-aac7-dfdab4259a57 DOI https://doi.org/10.5772/63344 Publisher Intech ISBN 978-953-51-2572-3 Source Chemical Vapor Deposition: Recent Advances and Applications in Optical, Solar Cells and Solid State Devices Part of collection Institutional Repository Document type book chapter Rights © 2016 V. Mohammadi, S. Nihtianova Files PDF 51153.pdf 8.83 MB Close viewer /islandora/object/uuid:f4f66452-8a52-42c2-aac7-dfdab4259a57/datastream/OBJ/view