Print Email Facebook Twitter Wideband High Power Amplifier Design Title Wideband High Power Amplifier Design Author Li, J. Contributor De Vreede, L.C.N. (mentor) Calvillo-Cortés, D.A. (mentor) Heeres, R. (mentor) Roedle, T. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics & Computer Engineering Programme Microelectronics Date 2011-08-31 Abstract This thesis aims for high power wideband amplifiers suitable for base station instrumentation purposes. A power combing topology is introduced, not only to achieve high power but also good input and output matching. Two kinds of broadband 3-dB quadrature couplers, which are important components in the power combing topology, are designed and implemented. In order to reduce the cost, broadband Wilkinson dividers are designed to replace some of the 3-dB quadrature couplers in the topology. Both NXP LDMOS die and Cree GaN packaged transistors are reviewed for the wideband PA. Two bandwidth extension design methods are studied and developed within this thesis. The design using the Cree GaN packaged transistors was implemented and measured. Beside the high power wideband amplifier design, additional investigation on adaptive matching using duty-cycle control in Class-E power amplifier is presented. Subject power amplifierhigh powerwideband To reference this document use: http://resolver.tudelft.nl/uuid:fdf758f2-ea47-44a5-b384-806464750dee Embargo date 2012-09-01 Part of collection Student theses Document type master thesis Rights (c) 2011 Li, J. Files PDF Thesis_report_J_LI.pdf 3.32 MB Close viewer /islandora/object/uuid:fdf758f2-ea47-44a5-b384-806464750dee/datastream/OBJ/view